CMS120N080B
Part Number:
CMS120N080B
Category:
-
Manufacturer:
Description:
SIC N-MOSFET,1200V,35A,TO-263-7L
Encapsulation:
Package:
Bulk
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$20
$20
10+
$14.24
$142.4
100+
$11
$1100
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)
188W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs(th) (Max) @ Id
4V @ 10mA
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+20V, -5V
Rds On (Max) @ Id, Vgs
90mOhm @ 10A, 20V
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