EPC2307ENGRT
Part Number:
EPC2307ENGRT
Category:
-
Manufacturer:
Description:
TRANS GAN 200V .010OHM 7QFN
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
15360
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$8.21
$8.21
10+
$5.56
$55.6
100+
$4.21
$421
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
48A (Ta)
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Rds On (Max) @ Id, Vgs
10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 4mA
Supplier Device Package
7-QFN (3x5)
Package / Case
7-PowerWQFN
Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1401 pF @ 100 V
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