SIJ5623DP-T1-GE3
Part Number:
SIJ5623DP-T1-GE3
Category:
-
Manufacturer:
Description:
P-CHANNEL 60 V (D-S) MOSFET 150C
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
6000
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$2.61
$2.61
10+
$1.68
$16.8
100+
$1.14
$114
500+
$0.92
$460
1000+
$0.9
$900
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs
24mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1575 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Ta), 26.1A (Tc)
Power Dissipation (Max)
4.1W (Ta), 32.9W (Tc)
Latest Products
szlcwkj@163.com
346959483
18923764396
Scan QR Code