SISS5708DN-T1-BE3
Part Number:
SISS5708DN-T1-BE3
Category:
-
Manufacturer:
Description:
N-CHANNEL 150 V (D-S) MOSFET 150
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
5975
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$2.72
$2.72
10+
$1.74
$17.4
100+
$1.18
$118
500+
$0.96
$480
1000+
$0.94
$940
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Rds On (Max) @ Id, Vgs
23mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
975 pF @ 75 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Ta), 33.8A (Tc)
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