ASZM040120T
Part Number:
ASZM040120T
Category:
-
Manufacturer:
Description:
N-CHANNEL SILICON CARBIDE POWER
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
13
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$11.48
$11.48
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
340W (Tc)
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Package / Case
TO-247-4
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+25V, -10V
Supplier Device Package
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Vgs(th) (Max) @ Id
3.6V @ 9.5mA
Rds On (Max) @ Id, Vgs
32mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2820 pF @ 1000 V
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