Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount, Wettable Flank
Power Dissipation (Max)
2.7W (Ta)
Supplier Device Package
PowerDI3333-8 (SWP) Type UX
Current - Continuous Drain (Id) @ 25°C
18.8A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2087 pF @ 30 V