EPC2016C
Stock
MOQ: 1
Qty
Price
Total
1+
$3.74
$3.74
10+
$2.44
$24.4
100+
$1.7
$170
500+
$1.46
$730
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Grade
-
Qualification
-
Part Status
Not For New Designs
Power Dissipation (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Supplier Device Package
Die
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 50 V
Technology
GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id
2.5V @ 3mA
Vgs (Max)
+6V, -4V
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 5V
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