Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
169A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
555W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Supplier Device Package
TO-247-3L
Rds On (Max) @ Id, Vgs
18mOhm @ 60A, 18V
Vgs(th) (Max) @ Id
2.5V @ 100mA
Input Capacitance (Ciss) (Max) @ Vds
7390 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
315 nC @ 400 V