Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Power Dissipation (Max)
375W (Tc)
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 18V
Input Capacitance (Ciss) (Max) @ Vds
2160 pF @ 800 V
Vgs(th) (Max) @ Id
4.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 18 V