QS1200SCM36
Part Number:
QS1200SCM36
Category:
-
Manufacturer:
Description:
1200V 36AMP SiC Mosfet
Encapsulation:
Package:
Tube
Quantity:
990
RoHS Status:
Supported
PDF:
Stock
MOQ: 50
Qty
Price
Total
50+
$1.38
$69
100+
$1.28
$128
250+
$1.1
$275
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Qualification
-
Grade
Automotive
Package / Case
TO-247-3
Operating Temperature
-55°C ~ 175°C
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
2.8V
Current - Continuous Drain (Id) @ 25°C
36A
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
PG-TO247-3
Vgs (Max)
+25V, -10V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 600 V
Input Capacitance (Ciss) (Max) @ Vds
1001 pF @ 800 V
Power Dissipation (Max)
198W
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