IV2Q06025T4Z
Part number
IV2Q06025T4Z
Product Category
Single FETs, MOSFETs
Manufacturer
Inventchip
Description
GEN 2, SIC MOSFET, 650V 25MOHM,
Encapsulation
Tube
Packing
Quantity
1660
RoHS status
NO
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Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$13.73
$13.73
10
$9.57
$95.7
100
$7.22
$722
500
$6.77
$3385
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Package / Case
TO-247-4
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Vgs (Max)
+20V, -5V
Power Dissipation (Max)
454W (Tc)
Rds On (Max) @ Id, Vgs
33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 600 V
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