IV2Q06040L1
Part number
IV2Q06040L1
Product Category
Single FETs, MOSFETs
Manufacturer
Inventchip
Description
GEN 2, SIC MOSFET, 650V 40MOHM,
Encapsulation
Strip
Packing
Quantity
1660
RoHS status
NO
Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$11.3
$11.3
10
$7.78
$77.8
100
$5.8
$580
500
$5.24
$2620
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs(th) (Max) @ Id
4.5V @ 7.5mA
Current - Continuous Drain (Id) @ 25°C
63.5A (Tc)
Vgs (Max)
+20V, -5V
Supplier Device Package
TOLL
Power Dissipation (Max)
249W (Tc)
Rds On (Max) @ Id, Vgs
53mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs
94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 600 V
Package / Case
TOLL
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