IV2Q12080T4Z
Part number
IV2Q12080T4Z
Product Category
Single FETs, MOSFETs
Manufacturer
Inventchip
Description
GEN2, SIC MOSFET, 1200V 80MOHM,
Encapsulation
Tube
Packing
Quantity
1660
RoHS status
NO
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Inventory
base.lang_mini : 1
Quantity
Price
Total price
1
$9.01
$9.01
10
$6.13
$61.3
100
$4.51
$451
500
$3.89
$1945
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Power Dissipation (Max)
250W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs (Max)
+20V, -5V
Vgs(th) (Max) @ Id
4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1214 pF @ 800 V
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