RMD0A8P20ES9
Part number
RMD0A8P20ES9
Product Category
FET, MOSFET Arrays
Manufacturer
Rectron USA
Description
MOSFET 2P-CH 20V 0.8A SOT363-6L
Encapsulation
Tape & Reel (TR)
Packing
Quantity
19600
RoHS status
NO
Share
PDF:
Inventory
base.lang_mini : 3000
Quantity
Price
Total price
3000
$0.1
$300
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drain to Source Voltage (Vdss)
20V
Vgs(th) (Max) @ Id
1V @ 250µA
Configuration
2 P-Channel (Dual)
Package / Case
6-TSSOP, SC-88, SOT-363
Input Capacitance (Ciss) (Max) @ Vds
87pF @ 10V
Power - Max
800mW (Ta)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
0.0018C @ 4.5V
Supplier Device Package
SOT-363-6L
Newest products
Infineon Technologies
MOSFET N/P-CH 20V 3A/2.5A 8SO
Infineon Technologies
MOSFET 2N-CH 50V 2A 8SO
Diodes Incorporated
MOSFET 2N-CH 60V 1A SM8
onsemi
MOSFET 2N-CH 50V 0.51A SSOT6
onsemi
MOSFET 2P-CH 60V 0.34A SSOT6
onsemi
MOSFET N/P-CH 60V 0.51A SSOT6
onsemi
MOSFET 3N/3P-CH 30V 3A 16SOIC
onsemi
MOSFET 2N-CH 20V 5.5A 8SOIC