GCMX040C120S1-E1
Part Number:
GCMX040C120S1-E1
Category:
-
Manufacturer:
Description:
GEN3 1200V 40M SIC MOSFET MODULE
Encapsulation:
Package:
Tube
Quantity:
18
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$25.11
$25.11
10+
$18.12
$181.2
100+
$14.71
$1471
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Current - Continuous Drain (Id) @ 25°C
53A (Tc)
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
183W (Tc)
Vgs(th) (Max) @ Id
4V @ 10mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 18V
Vgs (Max)
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2740 pF @ 1000 V
Latest Products
szlcwkj@163.com
346959483
18923764396
Scan QR Code