PJD100P04E-AU_L2_006A1
PJD100P04E-AU_L2_006A1
PJD100P04E-AU_L2_006A1
Part Number:
PJD100P04E-AU_L2_006A1
Category:
-
Description:
40V P-CHANNEL ENHANCEMENT MODE M
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
0
RoHS Status:
Supported
Share:
RFQ
Stock
MOQ: 1
Qty
Price
Total
1+
$3.74
$3.74
10+
$2.44
$24.4
100+
$1.7
$170
500+
$1.46
$730
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
FET Type
P-Channel
Vgs(th) (Max) @ Id
2.5V @ 250µA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
Drain to Source Voltage (Vdss)
40 V
Supplier Device Package
TO-252AA
Rds On (Max) @ Id, Vgs
5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 135A (Tc)
Power Dissipation (Max)
3W (Ta), 176W (Tc)
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