IPB175N20NM6ATMA1
Part Number:
IPB175N20NM6ATMA1
Category:
-
Manufacturer:
Description:
IPB175N20NM6ATMA1
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
0
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$4.11
$4.11
10+
$2.69
$26.9
100+
$1.88
$188
500+
$1.66
$830
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
200 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Vgs(th) (Max) @ Id
4.5V @ 105µA
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 100 V
Supplier Device Package
PG-TO263-3-U01
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs
15.5mOhm @ 38A, 15V
Power Dissipation (Max)
3.8W (Ta), 203W (Tc)
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