IPM018N10NM5LF2AUMA1
Part Number:
IPM018N10NM5LF2AUMA1
Category:
-
Manufacturer:
Description:
IPM018N10NM5LF2AUMA1
Encapsulation:
Package:
Cut Tape (CT)
Quantity:
1390
RoHS Status:
Supported
PDF:
Stock
MOQ: 1
Qty
Price
Total
1+
$8.99
$8.99
10+
$6.11
$61.1
100+
$4.74
$474
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 10 V
Supplier Device Package
PG-HSOG-4-1
Package / Case
4-PowerSFN
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 285A (Tc)
Vgs(th) (Max) @ Id
3.45V @ 240µA
Input Capacitance (Ciss) (Max) @ Vds
14000 pF @ 50 V
Power Dissipation (Max)
3.8W (Ta), 349W (Tc)
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