18923764396
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BY25Q128ASWIG(R)

Part number BY25Q128ASWIG(R)
Product classification Memory
Manufacturer BYTe Semiconductor
Description 128 MBIT, 3.0V (2.7V TO 3.6V), -
Encapsulation
Packing Tape & Reel (TR)
Quantity 0
RoHS status YES
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Quantity

Price

Total price

3000

$0.8715

$2,614.5000

6000

$0.8400

$5,040.0000

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Product parameters
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TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency108 MHz
Memory FormatFLASH
Supplier Device Package8-WSON (5x6)
Write Cycle Time - Word, Page50µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time7 ns
Memory Organization16M x 8

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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