18923764396
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FBG20N04ASH

Part number FBG20N04ASH
Product classification Single FETs, MOSFETs
Manufacturer EPC Space
Description GAN FET HEMT 200V 4A 4FSMD-A
Encapsulation
Packing Bulk
Quantity 25
RoHS status NO
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$412.3875

$412.3875

10

$396.8895

$3,968.8950

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Product parameters
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TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 100 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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