G2K2P10D3E Single FETs, MOSFETs_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	G2K2P10D3E
Product classification：	Single FETs, MOSFETs
Manufacturer：	Goford Semiconductor
Description：	MOSFET P-CH ESD 100V 10A DFN3*3-
Encapsulation：
Packing：	Tape & Reel (TR)
Quantity：	4970
RoHS status：	YES
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Part number：

G2K2P10D3E

Product classification：

Single FETs, MOSFETs

Manufacturer：

Goford Semiconductor

Description：

MOSFET P-CH ESD 100V 10A DFN3*3-

Encapsulation：

Packing：

Tape & Reel (TR)

Quantity：

4970

RoHS status：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 6A, 10V
Power Dissipation (Max)	31W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1668 pF @ 50 V

Alternative models

                                          G2K2P10D3E                                        

                                          谷峰-GOFORD                                        

                                        Trench Mosfet                                      