G3K8N15HE Single FETs, MOSFETs_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	G3K8N15HE
Product classification：	Single FETs, MOSFETs
Manufacturer：	Goford Semiconductor
Description：	MOSFET N-CH ESD 150V 2A SOT-223
Encapsulation：
Packing：	Tape & Reel (TR)
Quantity：	5000
RoHS status：	YES
Share

Part number：

G3K8N15HE

Product classification：

Single FETs, MOSFETs

Manufacturer：

Goford Semiconductor

Description：

MOSFET N-CH ESD 150V 2A SOT-223

Encapsulation：

Packing：

Tape & Reel (TR)

Quantity：

5000

RoHS status：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-261-4, TO-261AA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Rds On (Max) @ Id, Vgs	370mOhm @ 2A, 10V
Power Dissipation (Max)	2.16W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-223
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	558 pF @ 75 V

Alternative models

                                          G3K8N15HE                                        

                                          谷峰-GOFORD                                        

                                        Trench Mosfet                                      