G3R40MT12D Single FETs, MOSFETs_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	G3R40MT12D
Product classification：	Single FETs, MOSFETs
Manufacturer：	GeneSiC Semiconductor
Description：	SIC MOSFET N-CH 71A TO247-3
Encapsulation：
Packing：	Tube
Quantity：	1732
RoHS status：	YES
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Part number：

G3R40MT12D

Product classification：

Single FETs, MOSFETs

Manufacturer：

GeneSiC Semiconductor

Description：

SIC MOSFET N-CH 71A TO247-3

Encapsulation：

Packing：

Tube

Quantity：

1732

RoHS status：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	GeneSiC Semiconductor
Series	G3R™
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Rds On (Max) @ Id, Vgs	48mOhm @ 35A, 15V
Power Dissipation (Max)	333W (Tc)
Vgs(th) (Max) @ Id	2.69V @ 10mA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	15V
Vgs (Max)	±15V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	2929 pF @ 800 V

Alternative models

                                          G3R40MT12D                                        

                                          基因碳化硅-GeneSiC                                        

                                        SiC MOSFET                                      