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G3S06504C

Part number G3S06504C
Product classification Single Diodes
Manufacturer Global Power Technology
Description DIODE SIL CARB 650V 11.5A TO252
Encapsulation
Packing Bulk
Quantity 30
RoHS status NO
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Inventory:
Total number

Quantity

Price

Total price

1

$3.1710

$3.1710

10

$2.6670

$26.6700

100

$2.1525

$215.2500

500

$1.9215

$960.7500

1000

$1.6380

$1,638.0000

2000

$1.5435

$3,087.0000

5000

$1.4805

$7,402.5000

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Product parameters
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TYPEDESCRIPTION
MfrGlobal Power Technology
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F181pF @ 0V, 1MHz
Current - Average Rectified (Io)11.5A
Supplier Device PackageTO-252
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 4 A
Current - Reverse Leakage @ Vr50 µA @ 650 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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