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GD30MPS06J

Part number GD30MPS06J
Product classification Single Diodes
Manufacturer GeneSiC Semiconductor
Description DIODE SIL CARB 650V 51A TO263-7
Encapsulation
Packing Tube
Quantity 663
RoHS status YES
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$6.7410

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TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesSiC Schottky MPS™
PackageTube
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F735pF @ 1V, 1MHz
Current - Average Rectified (Io)51A
Supplier Device PackageTO-263-7
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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