IV1D12010O2 Single Diodes_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	IV1D12010O2
Product classification：	Single Diodes
Manufacturer：	Inventchip Technology
Description：	DIODE SIL CARB 1.2KV 28A TO220-2
Encapsulation：
Packing：	Tube
Quantity：	190
RoHS status：	YES
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Part number：

IV1D12010O2

Product classification：

Single Diodes

Manufacturer：

Inventchip Technology

Description：

DIODE SIL CARB 1.2KV 28A TO220-2

Encapsulation：

Packing：

Tube

Quantity：

190

RoHS status：

YES

Product parameters

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TYPE	DESCRIPTION
Mfr	Inventchip Technology
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-2
Mounting Type	Through Hole
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Technology	SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F	575pF @ 1V, 1MHz
Current - Average Rectified (Io)	28A
Supplier Device Package	TO-220-2
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Current - Reverse Leakage @ Vr	50 µA @ 1200 V

Alternative models

                                          IV1D12010O2                                        

                                          瞻芯-IVCT                                        

                                        SiC SBD                                      