TC58BVG2S0HBAI6 Memory_HYF-Group_capacitor_Inductor_Potentiometer_Photoelectric device

Part number：	TC58BVG2S0HBAI6
Product classification：	Memory
Manufacturer：	Toshiba Memory America, Inc. (Kioxia America, Inc.)
Description：	4GB SLC BENAND 24NM I TEMP BGA
Encapsulation：
Packing：	Tray
Quantity：	338
RoHS status：	YES
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Part number：

TC58BVG2S0HBAI6

Product classification：

Memory

Manufacturer：

Toshiba Memory America, Inc. (Kioxia America, Inc.)

Description：

4GB SLC BENAND 24NM I TEMP BGA

Encapsulation：

Packing：

Tray

Quantity：

338

RoHS status：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Memory America, Inc. (Kioxia America, Inc.)
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	67-VFBGA
Mounting Type	Surface Mount
Memory Size	4Gbit
Memory Type	Non-Volatile
Operating Temperature	-40°C ~ 85°C (TA)
Voltage - Supply	2.7V ~ 3.6V
Technology	FLASH - NAND (SLC)
Memory Format	FLASH
Supplier Device Package	67-VFBGA (6.5x8)
Write Cycle Time - Word, Page	25ns
Memory Interface	Parallel
Access Time	20 ns
Memory Organization	512M x 8

Alternative models

                                          TC58BVG2S0HBAI6                                        

                                          铠侠-KIOXIA                                        

                                        BENAND (Built-in ECC SLCNAND)                                      