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TP65H070LSG

Part number TP65H070LSG
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Description GANFET N-CH 650V 25A 3PQFN
Encapsulation
Packing Tube
Quantity 0
RoHS status NO
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TYPEDESCRIPTION
MfrTransphorm
SeriesTP65H070L
PackageTube
Product StatusDISCONTINUED
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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