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NE85633-T1B-A

零件编号 NE85633-T1B-A
产品分类 双极射频晶体管
制造商 CEL (California Eastern Laboratories)
描述 SAME AS 2SC3356 NPN SILICON AMPL
封装
包装 卷带式 (TR)
数量 27000
RoHS 状态 YES
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库存:
总数

数量

价格

总价

3000

$1.8900

$5,670.0000

9000

$1.4700

$13,230.0000

15000

$1.2600

$18,900.0000

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产品参数
PDF(1)
类型描述
制造商CEL (California Eastern Laboratories)
系列-
包裹卷带式 (TR)
产品状态OBSOLETE
包装/箱TO-236-3, SC-59, SOT-23-3
安装类型Surface Mount
晶体管类型NPN
工作温度150°C (TJ)
获得11.5dB
功率 - 最大200mW
集电极电流 (Ic)(最大)100mA
电压 - 集电极发射极击穿(最大)12V
直流电流增益 (hFE)(最小值)@ Ic、Vce50 @ 20mA, 10V
频率-转变7GHz
噪声系数(dB Typ @ f)1.1dB @ 1GHz
供应商设备包3-MINIMOLD
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NONLINEAR MODEL

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
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MEMS OSC XO 100.0000MHZ LVPECL
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MEMS OSC XO 125.0000MHZ LVPECL
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MEMS OSCILLATOR, ULTRA LOW POWER
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MEMS OSC XO 133.3330MHZ CMOS SMD
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MEMS OSC XO 175.0000MHZ LVDS SMD
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MEMS OSC LOW JITTER 125MHZ LVDS
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