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STG200G65FD8AG

零件编号 STG200G65FD8AG
产品分类 单 IGBT
制造商 STMicroelectronics
描述 IGBT TRENCH FS 650V 200A DIE
封装
包装 卷带式 (TR)
数量 0
RoHS 状态 YES
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库存:
总数

数量

价格

总价

133

$7.0980

$944.0340

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产品参数
PDF(1)
类型描述
制造商STMicroelectronics
系列M
包装卷带式 (TR)
产品状态ACTIVE
包装/箱Die
安装类型Surface Mount
工作温度-40°C ~ 175°C (TJ)
输入类型Standard
Vce(on)(最大值)@Vge, Ic1.8V @ 15V, 200A
供应商设备包Die
IGBT类型Trench Field Stop
Td(开/关)@ 25°C66.2ns/442.7ns
开关能量5.34mJ (on), 6.23mJ (off)
测试条件400V, 200A, 4.7Ohm, 15V
栅极电荷701 nC
年级Automotive
集电极电流 (Ic)(最大)200 A
电压 - 集电极发射极击穿(最大)650 V
集电极脉冲电流 (Icm)600 A
资质AEC-Q101
替代型号
STG200G65FD8AG
意法-ST
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
相似型号
STG200G65FD8AG
意法-ST
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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