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TW015Z120C,S1F

零件编号 TW015Z120C,S1F
产品分类 单 FET、MOSFET
制造商 Toshiba Electronic Devices and Storage Corporation
描述 G3 1200V SIC-MOSFET TO-247-4L 1
封装
包装 管子
数量 98
RoHS 状态 YES
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库存:
总数

数量

价格

总价

1

$64.3965

$64.3965

30

$56.5845

$1,697.5350

120

$52.6890

$6,322.6800

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产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包装管子
产品状态ACTIVE
包装/箱TO-247-4
安装类型Through Hole
工作温度175°C
技术SiC (Silicon Carbide Junction Transistor)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C100A (Tc)
Rds On(最大)@Id、Vgs21mOhm @ 50A, 18V
功耗(最大)431W (Tc)
Vgs(th)(最大值)@Id5V @ 11.7mA
供应商设备包TO-247-4L(X)
驱动电压(最大导通电阻、最小导通电阻)18V
Vgs(最大)+25V, -10V
漏源电压 (Vdss)1200 V
栅极电荷 (Qg)(最大值)@Vgs158 nC @ 18 V
输入电容 (Ciss)(最大值)@Vds6000 pF @ 800 V

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Sullins Connector Solutions
CONN HEADER VERT 1POS
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CONN HEADER VERT 2POS
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CONN HEADER R/A 2POS
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